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磷化銦InP單晶襯底片，高質(zhì)量大直徑低位錯磷化銦單晶是第二代半導(dǎo)體材料。包含2寸，3寸，4寸，6寸等不同規(guī)格產(chǎn)品。 InP single crystal substrate sheet, high quality large diameter low misp indium single crystal is the second generation semiconductor material.Including 2 inches, 3 inches, 4 inches, 6 inches and other products of different specifications.

磷化銦InP外延片，高質(zhì)量大直徑低位錯磷化銦單晶是第二代半導(dǎo)體材料。包含2寸，3寸，4寸,6寸等不同規(guī)格產(chǎn)品。 InP epitaxial wafer, high quality large diameter low misp indium single crystal is the second generation semiconductor material.Including 2 inches, 3 inches, 4 inches,6 inches and other products of different specifications.

GaAs具有很高的電子遷移率，故可用于制備高速或微波半導(dǎo)體器件。砷化鎵還用于制作耐高溫、抗輻照或低噪聲器件，以及近紅外發(fā)光和激光器件，也用于作光電陰極材料等，以成為超高速半導(dǎo)體集成電路的基礎(chǔ)材料。 GaAs has high electron mobility and can be used to fabricate high speed or microwave semiconductor devices.Gallium arsenide is also used to make high temperature, radiation resistance or low noise devices, as well as near infrared luminescence and laser devices, as well as photocathode materials, etc., in order to become the basis of ultra-high-speed semiconductor integrated circuits.

碳化硅（SiC）是性能優(yōu)異的第三代寬禁帶半導(dǎo)體材料，具有禁帶寬度大、高熱導(dǎo)率、高擊穿電場、本征溫度高、抗輻射、化學(xué)穩(wěn)定性好、電子飽和漂移速度高等優(yōu)點(diǎn)。 Silicon carbide (SiC) is a third-generation wide band gap semiconductor material with excellent performance, which has the advantages of wide band gap, high thermal conductivity, high breakdown electric field, high intrinsic temperature, radiation resistance, good chemical stability and high electron saturation drift speed.

碳化硅（SiC）是性能優(yōu)異的第三代寬禁帶半導(dǎo)體材料，具有禁帶寬度大、高熱導(dǎo)率、高擊穿電場、本征溫度高、抗輻射、化學(xué)穩(wěn)定性好、電子飽和漂移速度高等優(yōu)點(diǎn)。 Silicon carbide (SiC) is a third-generation wide band gap semiconductor material with excellent performance, which has the advantages of wide band gap, high thermal conductivity, high breakdown electric field, high intrinsic temperature, radiation resistance, good chemical stability and high electron saturation drift speed.

GaAs具有很高的電子遷移率，故可用于制備高速或微波半導(dǎo)體器件。砷化鎵還用于制作耐高溫、抗輻照或低噪聲器件，以及近紅外發(fā)光和激光器件，也用于作光電陰極材料等。更重要的是它將成為今后發(fā)展超高速半導(dǎo)體集成電路的基礎(chǔ)材料。 GaAs has high electron mobility and can be used to fabricate high speed or microwave semiconductor devices.Gallium arsenide is also used to make high temperature, radiation resistance or low noise devices, as well as near infrared luminescence and laser devices, as well as photocathode materials, etc., in order to become the basis of ultra-high-speed semiconductor integrated circuits.

氮化鎵具有高的電離度，出色的擊穿能力、更高的電子密度和電子速度以及更高的工作溫度，且具有低導(dǎo)通損耗、高電流密度等優(yōu)勢。通常用于微波射頻、電力電子、光電子三大領(lǐng)域。 GaN has the advantages of high ionization degree, excellent breakdown ability, higher electron density and electron velocity, and higher operating temperature, as well as low conduction loss and high current density.It is usually used in three fields: microwave radio frequency, power electronics and optoelectronics.

氮化鎵具有高的電離度，出色的擊穿能力、更高的電子密度和電子速度以及更高的工作溫度，且具有低導(dǎo)通損耗、高電流密度等優(yōu)勢。通常用于微波射頻、電力電子、光電子三大領(lǐng)域。 GaN has the advantages of high ionization degree, excellent breakdown ability, higher electron density and electron velocity, and higher operating temperature, as well as low conduction loss and high current density.It is usually used in three fields: microwave radio frequency, power electronics and optoelectronics.